Light emitting diode chip having electrode pad

ABSTRACT

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This patent document is a continuation of U.S. patent application Ser.No. 15/336,510, filed Oct. 27, 2016, which is a continuation of U.S.patent application Ser. No. 14/984,829, filed Dec. 30, 2015, issued asU.S. Pat. No. 9,520,536 on Dec. 13, 2016, which is acontinuation-in-part of U.S. patent application Ser. No. 14/630,273,filed on Feb. 24, 2015, issued as U.S. Pat. No. 9,397,264 on Jul. 19,2016, which claims the benefits and priorities to U.S. patentapplication Ser. No. 13/885,777, filed on May 16, 2013, issued as U.S.Pat. No. 8,987,772 on Mar. 24, 2015, which is the National Stage entryof International Application PCT/KR2011/001385, filed on Feb. 28, 2011,which further claims priorities from and the benefits of Korean PatentApplication No. 10-2010-0114747, filed on Nov. 18, 2010, Korean PatentApplication No. 10-2010-0114748, filed on Nov. 18, 2010. This patentdocument also claims the benefits and priority to Korean PatentApplication No. 10-2014-0195165, filed on Dec. 31, 2014. The aboveapplications are all hereby incorporated by reference for all purposesas if fully set forth herein.

TECHNICAL FIELD

The disclosed technology relates to a light emitting diode chip and,more particularly, to a light emitting diode chip having electrode pads.

BACKGROUND

Gallium nitride (GaN) based light emitting diodes (LEDs) have been usedin a wide range of applications including natural color LED displays,LED traffic lights, white LEDs, etc. In recent years, a highly efficientwhite LED is expected to replace fluorescent lamps and, in particular,efficiency of the white LED approaches efficiency of typical fluorescentlamps.

The GaN-based LED is generally formed by growing epitaxial layers on asubstrate, for example, a sapphire substrate, and includes an n-typesemiconductor layer, a p-type semiconductor layer and an active layerinterposed between the n-type semiconductor layer and the p-typesemiconductor layer. Further, an n-electrode pad is formed on the n-typesemiconductor layer and a p-electrode pad is formed on the p-typesemiconductor layer. The LED is electrically connected to and operatedby an external power source through these electrode pads. Here, electriccurrent is directed from the p-electrode pad to the n-electrode padthrough the semiconductor layers.

To assist current spreading in the LED, the LED includes extensionsextending from the electrode pads. For example, U.S. Pat. No. 6,650,018discloses an LED which includes a plurality of extensions extending inopposite directions from electrode contact portions, that is, electrodepads to enhance current spreading. The use of the extensions extendingfrom the electrode pads may result in improvement in efficiency of theLED through current spreading.

However, an n-electrode pad and n-electrode extensions are generallyformed on the n-type semiconductor layer exposed by etching the p-typesemiconductor layer and the active layer. Accordingly, the formation ofthe n-electrode pad and the n-electrode extensions results in areduction in light emitting area, causing deterioration in lightemitting efficiency.

Meanwhile, since the electrode pads and the electrode extensions areformed of metal, the electrode pads and the electrode extensions absorblight generated in the active layer, thereby causing optical loss.Further, although the use of the electrode extensions enhances currentspreading, current crowding still occurs at regions near the electrodeextensions, causing electrode extension induced optical loss. Inaddition, since the electrode pads and the electrode extensions use amaterial such as Cr, which exhibits low reflectivity, as an underlyinglayer, optical loss becomes severe due to optical absorption by bottomportions of the electrode pads and/or the electrode extensions.

Furthermore, as the size of the LED increases, the likelihood of adefect being present in the LED increases. For example, defects such asthreading dislocations and pin-holes, provide a path through whichelectric current flows rapidly, thereby disturbing current spreading inthe LED

Moreover, when a large LED of 1 mm² is operated at a current of about200 mA or more, the current crowds through such defects or through acertain position and the LED suffers a severe reduction in externalquantum efficiency relating to current density, which is referred to asa droop phenomenon.

SUMMARY

Exemplary embodiments of the disclosed technology provide light emittingdiode chips configured to prevent a reduction in light emitting arearesulting from formation of electrode pads and/or electrode extensions.

Exemplary embodiments of the disclosed technology provide light emittingdiode chips which permit uniform current spreading over a wide area byrelieving current crowding near electrode pads and electrode extensions.

Exemplary embodiments of the disclosed technology provide light emittingdiode chips capable of preventing optical loss due to electrode pads andelectrode extensions.

Exemplary embodiments of the disclosed technology provide light emittingdiode chips that may prevent current crowding at a certain positionduring operation at high current, thereby enhancing external quantumefficiency.

In accordance with one aspect, a light emitting diode (LED) chipincludes: a semiconductor stack including a first conductive typesemiconductor layer, a second conductive type semiconductor layer on thefirst conductive type semiconductor layer, and an active layerinterposed between the first conductive type semiconductor layer and thesecond conductive type semiconductor layer; a first electrode padlocated on the second conductive type semiconductor layer opposite tothe first conductive type semiconductor layer; a first electrodeextension extending from the first electrode pad and connected to thefirst conductive type semiconductor layer; a second electrode padelectrically connected to the second conductive type semiconductorlayer; and an insulation layer interposed between the first electrodepad and the second conductive type semiconductor layer. Since the firstelectrode pad is located on the second conductive type semiconductorlayer, it is possible to prevent a reduction in light emitting area dueto the formation of the first electrode pad.

The LED chip may further include a substrate and the semiconductor stackmay be located on the substrate. In this case, the first conductive typesemiconductor layer is located closer to the substrate than the secondconductive type semiconductor layer. In addition, the second electrodepad may also be located on the second conductive type semiconductorlayer.

The insulation layer may include a distributed Bragg reflector. Areflector may also be interposed between the insulation layer and thesecond conductive type semiconductor layer. The reflector may be adistributed Bragg reflector or a metal reflector.

In some exemplary embodiments, a transparent conductive layer may beinterposed between the insulation layer and the second conductive typesemiconductor layer. The transparent conductive layer under theinsulation layer assists supply of electric current to the active layerunder the insulation layer. Alternatively, the reflector may be indirect contact with the second conductive type semiconductor layer underthe first electrode pad, thereby reducing optical loss by thetransparent conductive layer.

In some exemplary embodiments, the LED chip may further include a dotpattern interposed between the first electrode extension and the firstconductive type semiconductor layer along the first electrode extensionsuch that the first electrode extension is partially separated from thefirst conductive type semiconductor layer by the dot pattern. The dotpattern may relieve current crowding around the first electrodeextension and permits current spreading over a wider area.

The dot pattern may be formed of an insulation material. The dot patternmay include a reflector, for example, a metal reflector or a distributedBragg reflector.

In some exemplary embodiments, the semiconductor stack may furtherinclude a plurality of through-holes extending through the secondconductive type semiconductor layer and the active layer to expose thefirst conductive type semiconductor layer. The plurality ofthrough-holes may be arranged along the first electrode extension andthe first electrode extension may be connected to the first conductivetype semiconductor layer through the through-holes.

Since the first electrode extension is connected to the first conductivetype semiconductor layer through the through-holes, it is possible toachieve current spreading over a wide area by relieving current crowdingaround the first electrode extension.

An insulation layer may be interposed between the first electrodeextension and the second conductive type semiconductor layer, so thatthe first electrode extension may be insulated from the secondconductive type semiconductor layer by the insulation layer.

In addition, the insulation layer under the first electrode extensionmay extend to a sidewall of the through-holes to insulate the firstelectrode extension from the sidewall of the through-holes.

The insulation layer under the first electrode extension may include adistributed Bragg reflector. In addition, the distributed Braggreflector under the first electrode extension may extend to a sidewallof the through-holes to insulate the first electrode extension from thesidewall of the through-holes.

In some exemplary embodiments, the LED chip may further include atransparent conductive layer interposed between the insulation layerunder the first electrode extension and the second conductive typesemiconductor layer. The transparent conductive layer allows electriccurrent to be supplied to the active layer under the first electrodeextension.

In other exemplary embodiments, the insulation layer may be in directcontact with the second conductive type semiconductor layer under thefirst electrode extension. In other words, the transparent conductivelayer is not located under the first electrode extension, therebypreventing optical loss due to the transparent conductive layer.

The LED chip may further include a second electrode extension extendingfrom the second electrode pad, and a transparent conductive layerlocated on the second conductive type semiconductor layer. The secondelectrode pad and the second electrode extension may be electricallyconnected to the second conductive type semiconductor layer through thetransparent conductive layer.

In some exemplary embodiments, a current blocking layer may beinterposed between the transparent conductive layer and the secondconductive type semiconductor layer along the second electrodeextension. The current blocking layer may be arranged in a line shape orin a dot pattern. With this structure, it is possible to relieve currentcrowding around the second electrode extension.

In addition, the current blocking layer may include a reflector.Therefore, it is possible to prevent light directed towards the secondelectrode extension from being absorbed and lost into the secondelectrode extension.

In other exemplary embodiments, the current blocking layer may bearranged in a dot pattern between the transparent conductive layer andthe second electrode extension along the second electrode extension. Thesecond electrode extension is connected to the second conductive typesemiconductor layer through the transparent conductive layer between thedot regions.

Further, an exemplary embodiment of the invention provides an LED chipthat has a dot pattern of contact regions at which the first electrodeextension and/or second electrode extension are electrically connectedto the semiconductor stack to permit current spreading over a wide areaof the LED chip.

For example, the first electrode extension may be connected to the firstconductive type semiconductor layer in a plurality of dot regions. Here,the plurality of dot regions may include first dot regions closer to thefirst electrode pad than the second electrode pad and second dot regionscloser to the second electrode pad than the first electrode pad. Inaddition, the first dot regions may increase in size as the distancebetween the first dot regions and the first electrode pads increases.Further, the second dot regions may decrease in size as the distancebetween the second dot regions and the first electrode pad increases.

The LED chip may further include a second electrode extension extendingfrom the second electrode pad; and a transparent conductive layerinterposed between the second electrode extension and the secondconductive type semiconductor layer. In addition, the second electrodeextension may be connected to the second conductive type semiconductorlayer through the transparent conductive layer in a plurality of dotregions, and the plurality of dot regions arranged along the secondelectrode extension may include third dot regions closer to the secondelectrode pad than the first electrode pad and fourth dot regions closerto the first electrode pad than the second electrode pad. The third dotregions may increase in size as the distance between the third dotregions and the second electrode pad increases. Further, the fourth dotregions may decrease in size as the distance between the fourth dotregions and the second electrode pad increases.

In addition, the first to fourth dot regions may increase in size as thedistance from the first to fourth dot regions to a line crossing thefirst electrode pad and the second electrode pad increases.

In accordance with another aspect, an LED chip includes: a firstconductive type semiconductor layer; a plurality of mesa structuresarranged on the first conductive type semiconductor layer and eachincluding a second conductive type semiconductor layer and an activelayer interposed between the first conductive type semiconductor layerand the second conductive type semiconductor layer; a first electrodepad, at least a part of which is located on the second conductive typesemiconductor layer opposite to the first conductive type semiconductorlayer; a first electrode extension extending from the first electrodepad and connected to the first conductive type semiconductor layer; asecond electrode pad electrically connected to the second conductivetype semiconductor layer; and an insulation layer interposed between thefirst electrode pad and the second conductive type semiconductor layer.Since the first electrode pad is formed on the second conductive typesemiconductor layer, it is possible to prevent a reduction in lightemitting area due to the formation of the first electrode pad. Further,since the LED chip employs the plurality of mesa structures, the LEDchip may achieve current spreading to the plurality of mesa structuresand prevent a rapid increase in current density in a certain position ofthe LED chip, thereby improving external quantum efficiency.

The LED chip may further include a substrate and the first conductivetype semiconductor layer may be located on the substrate. In this case,the first conductive type semiconductor layer is located closer to thesubstrate than the second conductive type semiconductor layer. Inaddition, the second electrode pad may also be located on the secondconductive type semiconductor layer.

The second electrode pad may include a plurality of electrode padslocated on the plurality of mesa structures, respectively. In addition,the first electrode pad may include a plurality of electrode padslocated on the plurality of mesa structures, respectively.

The plurality of mesa structures may be separated from each other by aseparation region exposing the first conductive type semiconductorlayer. As a result, a surface of the first conductive type semiconductorlayer is exposed at the separation region.

In an exemplary embodiment, the first electrode extension may include anelectrode extension connected to the first conductive type semiconductorlayer in the separation region. In addition, a dot pattern may beinterposed between the electrode extension and the first conductive typesemiconductor layer along the electrode extension in the separationregion to partially separate the electrode extension from the firstconductive type semiconductor layer. The dot pattern may be formed of aninsulation material and may include a distributed Bragg reflector. Thedot pattern may relieve current crowding around the electrode extensionand permit current spreading over a wider area.

The insulation layer interposed between the first electrode pad and thesecond conductive type semiconductor layer may include a distributedBragg reflector. Further, a reflector may be interposed between theinsulation layer and the second conductive type semiconductor layer. Thereflector may be a distributed Bragg reflector or a metal reflector.

Further, the first electrode pad may include an electrode pad partiallylocated in the separation region.

In some exemplary embodiments, a transparent conductive layer may beinterposed between the insulation layer and the second conductive typesemiconductor layer. The transparent conductive layer under theinsulation layer assists supply of electric current to the active layerunder the insulation layer. Alternatively, the reflector may be indirect contact with the second conductive type semiconductor layer in aregion under the first electrode pad, thereby reducing optical loss bythe transparent conductive layer.

Each of the mesa structures may include a plurality of through-holesextending through the second conductive type semiconductor layer and theactive layer to expose the first conductive type semiconductor layer.Further, the first electrode extension may include an electrodeextension connected to the first conductive type semiconductor layerthrough the plurality of through-holes. The plurality of through-holesis arranged along the electrode extension. Since the electrode extensionis connected to the first conductive type semiconductor layer throughthe through-holes, it is possible to achieve current spreading over awider area by relieving current crowding around the electrode extension.

In addition, an insulation layer is interposed between the secondconductive type semiconductor layer and the electrode extensionconnected to the first conductive type semiconductor layer through theplurality of through-holes. The electrode extension may be insulatedfrom the second conductive type semiconductor layer by the insulationlayer.

Further, the insulation layer interposed between the electrode extensionand the second conductive type semiconductor layer may include adistributed Bragg reflector. With this structure, it is possible toprevent optical loss of light generated in the mesa structure by theelectrode extension.

Further, the insulation layer interposed between the electrode extensionand the second conductive type semiconductor layer may extend to asidewall of the through-holes to insulate the first electrode extensionfrom the sidewall of the through-holes.

In addition, a transparent conductive layer may be interposed betweenthe insulation layer under the electrode extension and the secondconductive type semiconductor layer. The transparent conductive layermay assist supply of electric current to the active layer under theelectrode extension. Alternatively, the insulation layer may be indirect contact with second conductive type semiconductor layer under theelectrode extension. In other words, the transparent conductive layer isnot located under the electrode extension, thereby reducing optical lossby the transparent conductive layer.

The LED chip may further include a second electrode extension extendingfrom the second electrode pad; and a transparent conductive layer formedon the second conductive type semiconductor layer. The second electrodepad and the second electrode extension may be electrically connected tothe second conductive type semiconductor layer through the transparentconductive layer.

In some exemplary embodiments, a current blocking layer may beinterposed between the transparent conductive layer and the secondconductive type semiconductor layer along the second electrodeextension. The current blocking layer may be arranged in a line shape orin a dot pattern. With this structure, it is possible to relieve currentcrowding around the second electrode extension. The current blockinglayer may further be disposed under the second electrode pad.

In addition, the current blocking layer may include a reflector, forexample, a distributed Bragg reflector. Therefore, it is possible toprevent light directed towards the second electrode extension from beingabsorbed and lost into the second electrode extension.

In other exemplary embodiments, the current blocking layer may bearranged in a dot pattern between the transparent conductive layer andthe second electrode extension along the second electrode extension. Thesecond electrode extension is connected to the second conductive typesemiconductor layer through the transparent conductive layer between thedots.

According to exemplary embodiments, an LED chip includes an electrodepad formed on a semiconductor stack, thereby preventing a reduction inlight emitting area due to the formation of the electrode pad. Inaddition, electrode extensions are connected to a semiconductor layervia through-holes, thereby preventing a reduction in light emitting areadue to the formation of the electrode extension.

Further, the first electrode extension may be connected to thesemiconductor layer in dot regions, thereby relieving current crowdingaround the electrode extension while achieving current spreading over awide area. Furthermore, a current blocking layer is disposed under asecond electrode pad and second electrode extensions, thereby relievingcurrent crowding around the second electrode pad and second electrodeextensions.

Moreover, reflectors are disposed between semiconductor stacks and theelectrode pad and/or the electrode extensions, thereby preventingoptical loss due to the electrode pad and/or the electrode extension. Inaddition, a light emitting region is divided by a plurality of mesastructures, thereby preventing a reduction in external quantumefficiency under high current due to current crowding at a certainposition.

Exemplary embodiments of the disclosed technology provide a lightemitting diode capable of preventing current crowding around anelectrode pad.

In accordance with one aspect, a light emitting diode includes: a lightemitting structure including a first conductive-type semiconductorlayer, a second conductive-type semiconductor layer located on the firstconductive-type semiconductor layer, and an active layer interposedbetween the first conductive-type semiconductor layer and the secondconductive-type semiconductor layer; a transparent conductive layerformed on the second conductive-type semiconductor layer; a secondelectrode pad formed on the transparent conductive layer; a secondelectrode extension extending from the second electrode pad; and acurrent blocking layer interposed between the transparent conductivelayer and the second conductive-type semiconductor layer, wherein thetransparent conductive layer has one or more holes formed therein, theone or more holes exposing at least a portion of the current blockinglayer, and a portion of the second electrode extension is formed on thetransparent conductive layer and the other portion of the secondelectrode extension is formed above the current blocking layer exposedthrough the holes.

In accordance with another aspect, a light emitting diode device isprovided to include a light emitting structure including a firstconductive-type semiconductor layer, a second conductive-typesemiconductor layer located over the first conductive-type semiconductorlayer, and an active layer interposed between the first conductive-typesemiconductor layer and the second conductive-type semiconductor layer;a transparent conductive layer formed over the second conductive-typesemiconductor layer; a second electrode pad formed over the transparentconductive layer; a second electrode extension extending from the secondelectrode pad; and a current blocking layer interposed between thetransparent conductive layer and the second conductive-typesemiconductor layer, wherein the transparent conductive layer has anopening exposing at least a portion of the current blocking layer, andthe second electrode extension includes a first portion electricallyconnected to the transparent conductive layer and a second portionelectrically insulated from the transparent conductive layer.

The hole may have a width smaller than that of the current blockinglayer. The transparent conductive layer has one or more additionalopenings that are formed along the second electrode extension and spacedapart from one another. The first portion of the second electrodeextension is located on the transparent current blocking layer, and thesecond portion of the second electrode extension is located on thecurrent blocking layer exposed through the opening of the transparentconductive layer.

The light emitting diode may further include a protective insulationlayer covering the transparent conductive layer so that the secondelectrode extension is insulated from the transparent conductive layer;a first electrode pad located on the second conductive-typesemiconductor layer so as to be opposite to the first conductive-typesemiconductor layer; and a first electrode extension extending from thefirst electrode pad and connected to the first conductive-typesemiconductor layer.

The light emitting structure may have a groove penetrating through thesecond conductive-type semiconductor layer and the active layer toexpose the first conductive-type semiconductor layer, and the firstelectrode extension may be connected to the first conductive-typesemiconductor layer through the grooves.

The light emitting structure has one or more additional grooves that arearranged along the first electrode extension.

The first electrode extension and the second electrode extension may bedisposed in parallel with each other, and the one or more holes may bedisposed to be mismatched with the one or more grooves and may be formedat a length at which they are not overlapped with positions of thegrooves.

The first electrode extension may be formed along an edge of the lightemitting diode device, and the transparent conductive layer may includea metal oxide.

In another aspect, a light emitting diode device is provided tocomprise: a substrate having first and second edge that oppose to eachother; a light emitting structure including a first conductive-typesemiconductor layer formed over the substrate, a second conductive-typesemiconductor layer formed over the first conductive-type semiconductorlayer; and an active layer interposed between the first conductive-typesemiconductor layer and the second conductive-type semiconductor layer;a first electrode pad formed over the light emitting structure aroundthe first edge of the substrate; a first electrode extension extendingfrom the first electrode pad; a second electrode pad formed over thelight emitting structure around the second edge of the substrate; and asecond electrode extension extending from the second electrode pad,wherein along the first electrode extension, first openings are locatedspaced apart from one another to connect the first electrode extensionto the first conductive-type semiconductor layer, and along the secondelectrode extension, second openings are located spaced apart from oneanother to cause a current block in the openings and a current crowdbetween the openings.

In some implementations, the substrate includes a sapphire substrate. Insome implementations, the first openings penetrate through the activelayer and the second conductive-type semiconductor layer. In someimplementations, the light emitting diode device further comprises atransparent conductive layer located over the second conductivity-typesemiconductor layer and having a first portion electrically connected tothe second electrode extension and a second portion electricallyinsulated from the second electrode extension. In some implementations,the light emitting diode device further comprises a current blockinglayer located between the second conductivity-type semiconductor layerand the second electrode extension. In some implementations, the lightemitting diode device further comprises a protective insulation layercovering the transparent conductive layer. In some implementations, thefirst openings and the second openings are positioned on differenthorizontal lines from each other. In some implementations, the secondopenings have a width greater than that of the second electrodeextension.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theprinciples of the invention.

FIG. 1 is a schematic plan view of an LED chip according to oneexemplary embodiment of the invention.

FIGS. 2a, 2b and 2c are sectional views taken along lines A-A, B-B andC-C of FIG. 1, respectively.

FIG. 3 is a schematic plan view of an LED chip according to anotherexemplary embodiment of the invention.

FIGS. 4a, 4b and 4c are sectional views taken along lines A-A, B-B andC-C of FIG. 3, respectively.

FIGS. 5a, 5b and 5c are sectional views of an LED chip according to afurther exemplary embodiment of the invention, respectively.

FIGS. 6a, 6b and 6c are sectional views of an LED chip according to yetanother exemplary embodiment of the invention.

FIG. 7 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

FIG. 8 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

FIG. 9 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

FIG. 10 is a plan view of an LED chip according to yet another exemplaryembodiment of the invention.

FIG. 11 is a schematic plan view of an LED chip according to yet anotherexemplary embodiment of the invention.

FIGS. 12a, 12b, 12c and 12d are sectional views taken along lines A-A,B-B, C-C and D-D of FIG. 11, respectively.

FIG. 13 is a schematic plan view of an LED chip according to yet anotherexemplary embodiment of the invention.

FIGS. 14a, 14b, 14c and 14d are sectional views taken along lines A-A,B-B, C-C and D-D of FIG. 13, respectively.

FIGS. 15a, 15b and 15c are sectional views of an LED chip according toyet another exemplary embodiment of the invention.

FIGS. 16a, 16b and 16c are sectional views of an LED chip according toyet another exemplary embodiment of the invention, respectively.

FIG. 17 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

FIG. 18 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

FIGS. 19(a) and 19(b) are schematic plan views of an LED chip accordingto yet another exemplary embodiment of the invention.

FIG. 20 is plan views illustrating light emitting patterns forexplaining enhancement of light emitting characteristics when adopting aplurality of mesa structures.

FIG. 21 is a plan view showing a light emitting diode according to yetanother exemplary embodiment of the present invention.

FIG. 22 is a cross-sectional view taken along line I-I′ of FIG. 21.

FIG. 23 is a cross-sectional view taken along line II-II′ of FIG. 21.

FIG. 24 is a plan view showing a light emitting diode according to yetanother exemplary embodiment of the present invention.

FIG. 25 is a cross-sectional view taken along line III-III′ of FIG. 24.

FIG. 26 is a cross-sectional view taken along line IV-IV′ of FIG. 24.

DETAILED DESCRIPTION

The invention is described more fully hereinafter with reference to theaccompanying drawings, in which exemplary embodiments of the inventionare shown. This invention may, however, be embodied in many differentforms and should not be construed as limited to the exemplaryembodiments set forth herein. Rather, these exemplary embodiments areprovided so that this disclosure is thorough and will fully convey thescope of the invention to those skilled in the art. In the drawings, thesizes and relative sizes of layers and regions may be exaggerated forclarity. Like reference numerals in the drawings denote like elements.

It will be understood that when an element such as a layer, film, regionor substrate is referred to as being “on” another element, it can bedirectly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present.

FIG. 1 is a schematic plan view of an LED chip according to oneexemplary embodiment of the invention, and FIGS. 2a, 2b and 2c aresectional views taken along lines A-A, B-B and C-C of FIG. 1,respectively.

Referring to FIGS. 1, 2 a, 2 b and 2 c, the LED chip may include asemiconductor stack 30, a first electrode pad 37, a second electrode pad39, first electrode extensions 37 a, second electrode extensions 39 a,and a protective insulation layer 35. The LED chip may further include asubstrate 21, a buffer layer 23, a first functional layer 31 a, a secondfunctional layer 31 b, a transparent conductive layer 33, a lowerreflector 45, and a metal layer 47. The semiconductor stack 30 mayinclude a first conductive type semiconductor layer 25, an active layer27, and a second conductive type semiconductor layer 29.

The substrate 21 may be, for example, a sapphire substrate, a SiCsubstrate or a Si substrate, but is not limited thereto. The substrate21 may be a growth substrate for growing a gallium nitride basedcompound semiconductor layer thereon.

The first conductive type semiconductor layer 25 is located on thesubstrate 21 and the second conductive type semiconductor layer 29 islocated on the first conductive type semiconductor layer 25 with theactive layer 27 interposed between the first and second conductive typesemiconductor layers. The first conductive type semiconductor layer 25,active layer 27 and second conductive type semiconductor layer 29 may beformed of, but are not limited to, a GaN-based compound semiconductormaterial such as (Al, In, Ga)N. The active layer 27 is composed ofelements to emit light at desired wavelengths, for example, UV orvisible light.

The first conductive type semiconductor layer 25 may be an n-typenitride semiconductor layer and the second conductive type semiconductorlayer 29 may be a p-type nitride semiconductor layer, or vice versa.

The first conductive type semiconductor layer 25 and/or the secondconductive type semiconductor layer 29 may have a single layer structureor a multilayer structure. Further, the active layer 27 may have asingle quantum well structure or a multi-quantum well structure. Thelight emitting diode may further include a buffer layer 23 such as GaNor AlN between the substrate 21 and the first conductive typesemiconductor layer 25. These semiconductor layers 25, 27, 29 may beformed by metal organic chemical vapor deposition (MOCVD) or molecularbeam epitaxy (MBE).

The semiconductor stack 30 has a plurality of through-holes 30 aextending through the second conductive type semiconductor layer 29 andthe active layer 27 to expose the first conductive type semiconductorlayer 25. The plurality of through-holes 30 a is linearly arranged alongfirst electrode extensions 37 a, as shown in FIG. 1.

The transparent conductive layer 33 may be formed on the secondconductive type semiconductor layer 29. The transparent conductive layer33 may be formed of indium tin oxide (ITO) or Ni/Au and forms an ohmiccontact with the second conductive type semiconductor layer 29.

As clearly shown in FIG. 2a , the first electrode pad 37 is located onthe second conductive type semiconductor layer 29 of the semiconductorstack 30. The first electrode extensions 37 a extend from the firstelectrode pad 37. The first electrode pad 37 is insulated from thesemiconductor stack 30 and electrically connected to the firstconductive type semiconductor layer 25 through the first electrodeextensions 37 a. The first electrode extensions 37 a are connected tothe first conductive type semiconductor layer 25 exposed through theplurality of through-holes 30 a.

The second electrode pad 39 may be located on the transparent conductivelayer 33 and second electrode extensions 39 a may extend from the secondelectrode pad 39. The second electrode pad 39 and the second electrodeextensions 39 a may be connected to the transparent conductive layer 33.

Meanwhile, a protective insulation layer 35 is located on thesemiconductor stack 30 to cover the semiconductor stack 30. Theprotective insulation layer 35 may cover the transparent conductivelayer 33. In addition, the protective insulation layer 35 is interposedbetween the first electrode pad 37 and the second conductive typesemiconductor layer 29 to separate the first electrode pad 37 from thesecond conductive type semiconductor layer 29, and between the firstelectrode extensions 37 a and the second conductive type semiconductorlayer 29 to separate the first electrode extensions 37 a from the secondconductive type semiconductor layer 29. Further, the protectiveinsulation layer 35 covers side walls of the plurality of through-holes30 a to insulate the first electrode extensions 37 a from the sidewalls.

The first functional layer 31 a may be interposed in a pattern of dotsbetween the protective insulation layer 35 and the second conductivetype semiconductor layer 29 under the first electrode pad 37 and thefirst electrode extensions 37 a. The first functional layer 31 a may bea reflector having a reflectivity of 50% or more, for example, adistributed Bragg reflector. The distributed Bragg reflector may beformed by alternately stacking insulation layers having differenceindices of refraction, for example, SiO₂/TiO₂ or SiO₂/Nb₂O₅. When thefirst functional layer 31 a constitutes the reflector having areflectivity of 50% or more, the first functional layer 31 a may reflectlight directed towards the first electrode pad 37 and the firstelectrode extensions 37 a, thereby reducing optical loss. In addition,when the first functional layer 31 a constitutes the distributed Braggreflector, both the first functional layer 31 a and the protectiveinsulation layer 35 may serve to insulate the first electrode pad 37from the semiconductor stack 30.

Further, the second functional layer 31 b may be located between thetransparent conductive layer 33 and the second conductive typesemiconductor layer 29. The second functional layer 31 b may berestrictively located under the second electrode pad 39 and the secondelectrode extensions 39 a, and the transparent conductive layer 33 isconnected to the second conductive type semiconductor layer 29 whilecovering the second functional layer 31 b.

The second functional layer 31 b may serve as a current blocking layerand/or a reflector. For example, the second functional layer 31 b may beformed of an insulation material and shield electric current which flowsfrom the second electrode pad 39 and the second electrode extensions 39a to the second conductive type semiconductor layer 29 directly disposedunder the second functional layer 31 b through the transparentconductive layer 33. As a result, the second functional layer 31 brelieves current crowding around the second electrode pad 39 and thesecond electrode extensions 39 a, thereby enhancing current spreading.The second functional layer 31 b may also be formed of a reflectorhaving a reflectivity of 50% or more. Here, the reflector may include ametal reflector or a distributed Bragg reflector. For example, when thesecond functional layer 31 b constitutes a distributed Bragg reflectorformed by alternately stacking insulation layers having differentindices of refraction, the second functional layer 31 b may serve asboth the current blocking layer and the reflector. Furthermore, thesecond functional layer 31 b may be formed of the same material as thatof the first functional layer 31 a.

The lower reflector 45 may be a distributed Bragg reflector. The lowerdistributed Bragg reflector 45 is formed by alternately stackinginsulation materials having different indices of refraction and exhibitsa relatively high reflectivity, preferably a reflectivity of 90% ormore, not only with respect to light in a blue wavelength range, forexample, light generated in the active layer 27, but also with respectto light in a yellow wavelength range or in a green and/or redwavelength range. In addition, the lower distributed Bragg reflector 45may have a reflectivity of 90% or more in a wavelength range of, forexample 400-700 nm.

The lower distributed Bragg reflector 45 having a relatively highreflectivity over a wide wavelength range is formed by controlling theoptical thickness of each of the material layers repeatedly stacked oneabove another. The lower distributed Bragg reflector 45 may be formed,for example, by alternately stacking a first SiO₂ layer and a secondTiO₂ layer, or by alternately stacking a first SiO₂ layer and a secondNb₂O₅ layer. Since Nb₂O₅ exhibits a lower optical absorption rate thanTiO₂, it is more advantageous that the lower distributed Bragg reflector45 is formed by alternately stacking the first SiO₂ layer and the secondNb₂O₅ layer. As the number of first and second layers increases, thedistributed Bragg reflector 45 exhibits more stable reflectivity. Forexample, the distributed Bragg reflector 40 may be composed of fifty ormore layers, that is, 25 pairs or more.

It is not necessary for the first layers or second layers to have thesame thickness. The thickness of the first layers or the second layersis selected to provide relatively high reflectivity not only withrespect to light generated in the active layer 27 but also with respectto light having different wavelengths in the visible spectrum. Further,the lower distributed Bragg reflector 45 may be formed by stacking aplurality of distributed Bragg reflectors exhibiting high reflectivityin different wavelength ranges.

The use of the distributed Bragg reflector 45 in the LED chip results inreflection and discharge not only of light generated in the active layer27 but also of external light entering the substrate 21.

Further, the metal layer 47 may be located under the lower distributedBragg reflector 45. The metal layer 47 may be formed of a reflectivemetal such as aluminum to reflect light passing through the lowerdistributed Bragg reflector 45. Of course, the metal layer 47 may beformed of other metals instead of the reflective metal. Moreover, themetal layer 47 assists dissipation of heat from the stack 30, therebyenhancing heat dissipation of the LED chip 102.

In the present embodiment, the first electrode pad 37 is located abovethe second conductive type semiconductor layer 29 of the semiconductorstack 30. Accordingly, there is no need to etch the second conductivetype semiconductor layer 29 and the active layer 27 to form the firstelectrode pad 37, thereby preventing a reduction in light emitting area.In addition, since the first electrode extensions 37 a are connected tothe first conductive type semiconductor layer 25 through the pluralityof through-holes 30 a, it is possible to relieve a reduction in thelight emitting area due to the formation of the first electrodeextensions 37 a. Furthermore, since first electrode extensions 37 a areconnected in the dot pattern to the first conductive type semiconductorlayer 25 instead of being continuously connected thereto, it is possibleto relieve current crowding around the first electrode extensions 37 a.

Next, a method of fabricating the LED chip will be described.

First, epitaxial layers 25, 27, 29 are grown on a substrate 21. A bufferlayer 23 may be further formed before forming the epitaxial layers.Then, a second conductive type semiconductor layer 29 and an activelayer 27 are patterned to form a semiconductor stack 30 having a mesastructure. At this time, a plurality of through-holes 30 a is alsoformed therein.

Then, a first functional layer 31 a and a second functional layer 31 bare formed on the second conductive type semiconductor layer 29. Thefirst functional layer 31 a may be formed in a dot pattern on a regionto be formed with a first electrode pad 37 and on regions of the secondconductive type semiconductor layer between the plurality ofthrough-holes 30 a. The second functional layer 31 b is formed alongregions where a second electrode pad 39 and second electrode extensions39 a will be formed. Both the first functional layer 31 a and the secondfunctional layer 31 b may be formed of an insulation material or areflective material. Further, the first and second functional layers 31a and 31 b may be formed as distributed Bragg reflectors. The first andsecond functional layers 31 a, 31 b may be formed before the formationof the semiconductor stack 30 of the mesa structure.

Then, a transparent conductive layer 33 is formed. The transparentconductive layer 33 is connected to the second conductive typesemiconductor layer 29 and covers the second functional layer 31 b. Atthis time, the first functional layer 31 a is exposed, instead of beingcovered with the transparent conductive layer 33.

Then, a protective insulation layer 35 is formed to cover thetransparent conductive layer 33, the first functional layer 31 a and theplurality of through-holes 30 a. Meanwhile, the protective insulationlayer 35 in the plurality of through-holes 30 a is etched to expose thefirst conductive type semiconductor layer 25. In addition, theprotective insulation layer 35 above the second functional layer 31 b isetched to expose the transparent conductive layer 33.

Next, the first electrode pad 37, the second electrode pad 39, firstelectrode extensions 37 a and second electrode extensions 39 a areformed. The first electrode pad 37 is formed on the protectiveinsulation layer 35 and may be formed above the first functional layer31 a. Meanwhile, the first electrode extensions 37 a covers theplurality of through-holes 30 a, which are linearly arranged, and areconnected to the first conductive type semiconductor layer 25. Further,the second electrode pad 39 and the second electrode extensions 39 a areformed on the transparent conductive layer 33 above the secondfunctional layer 31 b.

Then, a lower reflector 45 and a metal layer 47 are formed under thesubstrate 21, and then the substrate 21 is divided into individual LEDchips, thereby finishing preparation of the LED chips.

FIG. 3 is a schematic plan view of an LED chip according to anotherexemplary embodiment of the invention, and FIGS. 4a, 4b and 4c aresectional views taken along lines A-A, B-B and C-C of FIG. 3,respectively.

Referring to FIGS. 3, 4 a, 4 b and 4 c, the LED chip according to thisembodiment is generally similar to the LED chip of the above embodiment,and detailed descriptions of the same components will thus be omittedherein.

Referring to FIG. 4a , a first electrode pad 37 is formed on a firstfunctional layer 51 a. In other words, the protective insulation layer35 between the first electrode pad 37 and the first functional layer 51a is eliminated in this embodiment. Further, the protective insulationlayer 35 between the first electrode extensions 37 a and thesemiconductor stack 30 is also eliminated in this embodiment. Herein,the first functional layer 51 a is formed of an insulation material andmay constitute a distributed Bragg reflector. A second functional layer31 b may be formed of the same material as that of the first functionallayer 51 a by the same process.

Meanwhile, the first electrode extensions 37 a in a plurality ofthrough-holes 30 a are separated from sidewalls in the through-holes 30a by the first functional layer 51 a. Specifically, the first functionallayer 51 a located on the second conductive type semiconductor layer 29in regions between the plurality of through-holes 30 a extends into theplurality of through-holes 30 a and covers the sidewalls of thethrough-holes 30 a. Meanwhile, some of the sidewalls, that is, sidewallslocated at opposite sides of the first electrode extensions 37 a in theplurality of through-holes 30 a, may be covered with the protectiveinsulation layer 35.

In the above embodiment, openings formed on the protective insulationlayer 35 include regions exposing the transparent conductive layer 33and regions exposing the first conductive type semiconductor layer inthe plurality of through-holes 30 a. Among these regions, the regionsexposing the transparent conductive layer 33 correspond to regions atwhich the second electrode pad 39 and the second electrode extensions 39a are formed, but the regions exposing the first conductive typesemiconductor layer do not correspond to the first electrode pad 37 andthe first electrode extensions 37 a. Accordingly, when the first andsecond electrode pads 37, 39 and the first and second electrodeextensions 37 a, 39 a are simultaneously formed by lift-off, a patternof openings is first formed on the protective insulation layer 35 usinga photomask, and the first and second electrode pads 37, 39 and thefirst and second electrode extensions 37 a, 39 a are formed usinganother photomask.

According to the present embodiment, however, since the shapes of thefirst and second electrode pads 37, 39 and the shapes of the first andsecond electrode extensions 37 a, 39 a correspond to the pattern ofopenings formed on the protective insulation layer 35, the first andsecond electrode pads 37, 39 and the first and second electrodeextensions 37 a, 39 a may be formed using the same photomask as thatused to pattern the protective insulation layer 35. In addition, afterforming the pattern of openings on the protective insulation layer 35using a photoresist, the photoresist may be continuously used to formthe first and second electrode pads 37, 39 and the first and secondelectrode extensions 37 a, 39 a. Accordingly, it is possible to reducethe number of photomasks for fabrication of LED chips, so that thenumber of photolithography and developing processes for forming thephotoresist pattern can be reduced.

FIGS. 5a, 5b and 5c are sectional views of an LED chip according to afurther exemplary embodiment of the invention. The respective figurescorrespond to sectional views taken along lines A-A, B-B and C-C of FIG.1.

Referring to FIGS. 5a, 5b and 5c , the LED chip according to thisembodiment is generally similar to the LED chip described with referenceto FIGS. 1 and 2. In this embodiment, however, a transparent conductivelayer 33 extends to a region between a first electrode pad 37 and asecond conductive type semiconductor layer 29 and to regions betweenfirst electrode extensions 37 a and the second conductive typesemiconductor layer 29.

Specifically, in the previous embodiments, the transparent conductivelayer 33 is not formed on regions of the second conductive typesemiconductor layer 29 under the first electrode pad 37 and the firstelectrode extensions 37 a, whereas the transparent conductive layer 33is also formed on these regions in this embodiment. Since thetransparent conductive layer 33 is connected to the second conductivetype semiconductor layer 29 under the first electrode pad 37 and thefirst electrode extensions 37 a, electric current can be supplied to thesemiconductor stack 30 in these regions.

The first electrode pad 37 and the first electrode extensions 37 a areinsulated from the transparent conductive layer 33 by the protectiveinsulation layer 35, and a first functional layer 61 a may be locatedbetween the protective insulation layer 35 and the transparentconductive layer 33.

In this embodiment, the first functional layer 61 a and a secondfunctional layer 31 b are formed by separate processes. Specifically,after the transparent conductive layer 33 is formed to cover the secondfunctional layer 31 b, the first functional layer 61 a is formed againon the transparent conductive layer 33.

FIGS. 6a, 6b and 6c are sectional views of an LED chip according to yetanother exemplary embodiment of the invention. The respective figurescorrespond to sectional views taken along lines A-A, B-B and C-C of FIG.3.

Referring to FIGS. 6a, 6b and 6c , the LED chip of this embodiment isgenerally similar to the LED chip described with reference to FIGS. 3and 4. In this embodiment, however, a transparent conductive layer 33extends to a region between a first electrode pad 37 and a secondconductive type semiconductor layer 29 and to regions between firstelectrode extensions 37 a and the second conductive type semiconductorlayer 29.

Specifically, in the embodiment of FIG. 3, the transparent conductivelayer 33 is not formed on regions of the second conductive typesemiconductor layer 29 under the first electrode pad 37 and the firstelectrode extensions 37 a, whereas the transparent conductive layer 33is located on these regions in the present embodiment. Since thetransparent conductive layer 33 is connected to the region of the secondconductive type semiconductor layer 29 under the first electrode pad 37and the first electrode extensions 37 a, electric current can besupplied to the semiconductor stack 30 in these regions.

The first electrode pad 37 and the first electrode extensions 37 a areinsulated from the transparent conductive layer 33 by a first functionallayer 71 a.

In this embodiment, the first functional layer 71 a and a secondfunctional layer 31 b are formed by separate processes. Specifically,after the transparent conductive layer 33 is formed to cover the secondfunctional layer 31 b, the first functional layer 71 a is formed againon the transparent conductive layer 33.

FIG. 7 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

Referring to FIG. 7, the LED chip according to this embodiment isgenerally similar to the LED chip described with reference to FIGS. 1and 2. In this embodiment, however, a second functional layer 71 b isarranged in a pattern of dots along a second electrode pad 39 and secondelectrode extensions 39 a.

Specifically, the second functional layer 71 b is arranged in thepattern of dots instead of being lineally arranged. In this embodiment,the transparent conductive layer 33 covers the second functional layer71 b and is connected to the second conductive type semiconductor layer29 in regions between the dots.

Arrangement of the second functional layer 71 b in the dot pattern maybe applied not only to the embodiment shown in FIGS. 1 and 2, but alsoto the embodiments shown in FIGS. 3 to 6.

FIG. 8 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

Referring to FIG. 8, the LED chip according to this embodiment isgenerally similar to the LED chip described with reference to FIGS. 1and 2. In this embodiment, however, a second functional layer 81 b isarranged in a pattern of dots along a second electrode pad 39 and secondelectrode extensions 39 a on a transparent conductive layer 33.

Specifically, the second functional layer 81 b is arranged in thepattern of dots between a transparent conductive layer 33 and a secondelectrode pad 30 and between the transparent conductive layer 33 and thesecond electrode extensions 39 a. The second electrode extensions 39 aare connected to the transparent conductive layer 33 in regions betweenthe dots.

The second functional layer 81 b according to this embodiment may beapplied not only to the exemplary embodiment shown in FIGS. 1 and 2, butalso to the exemplary embodiments shown in FIGS. 3 to 6. Furthermore,when the second functional layer 81 b is applied to the exemplaryembodiments of FIGS. 5 and 6, the first functional layers 61 a, 71 a andthe second functional layer 81 b may be formed on the transparentconductive layer 33 by the same process.

FIG. 9 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention. FIG. 9 corresponds to thesectional view taken along line C-C of FIG. 1.

Referring to FIG. 9, the LED chip of this embodiment is generallysimilar to the LED chips described above. In this embodiment, however,grooves are linearly formed on a semiconductor stack 30 instead of theplurality of through-holes 30 a. The grooves expose a first conductivetype semiconductor layer 25 and first electrode extensions 37 a areconnected to the first conductive type semiconductor layer 25 in thegrooves. In this embodiment, the dot pattern formed of an insulationmaterial is located between the first conductive type semiconductorlayer 25 and first electrode extensions 37 a and partially separates thefirst electrode extensions 37 a from the first conductive typesemiconductor layer 25.

Since the dot pattern allows the first electrode extensions 37 a to beconnected to the first conductive type semiconductor layer 25 in aplurality of dot regions separated from each other instead of beingcontinuously connected thereto, it is possible to relieve currentcrowding around the first electrode extensions 37 a.

FIG. 10 is a plan view of an LED chip according to yet another exemplaryembodiment of the invention

Referring to FIG. 10, first electrode extensions 37 a are connected to afirst conductive type semiconductor layer 25 in a plurality of dotregions 37 b. The plurality of dot regions 37 b may correspond, forexample, to the regions where the first electrode extensions 37 a areconnected to the first conductive type semiconductor layer 25 in theplurality of through-holes 30 a in the LED chip described with referenceto FIGS. 1 and 2, or to the regions where the first electrode extensions37 a are connected to the first conductive type semiconductor layer 25in the grooves in the LED chip described with reference to FIG. 9.

Further, second electrode extensions 39 a are connected to the secondconductive type semiconductor layer 29 through a transparent conductivelayer 33 in a plurality of dot regions 39 b. The plurality of dotregions 39 b may correspond, for example, to the regions where thesecond electrode extensions 39 a are connected to the transparentconductive layer 33 between the dots of the second functional layer 71 bin the LED chip described with reference to FIG. 7, or to the regionswhere the second electrode extensions 39 a are connected to thetransparent conductive layer 33 between the dots of the secondfunctional layer 81 b in the grooves in the LED chip described withreference to FIG. 8.

The dot regions 37 b, 39 b may have different sizes and currentspreading of the LED chip may be improved by adjusting the sizes of thedot regions. The sizes of the dot regions 37 b may be controlled byadjusting the sizes of the through-holes 30 a or the size of the dotpattern 91 a (see FIG. 9a ), and the sizes of the dot regions 39 b maybe controlled by adjusting the size of the second functional layer 71 bor 81 b.

For example, the dot regions 37 b in the first electrode extensions 37 amay be divided into first dot regions closer to the first electrode pad37 than the second electrode pad 39 and second dot regions closer to thesecond electrode pad than the first electrode pad. The sizes of thefirst dot regions may increase as the distance between the first dotregions and the first electrode pad 37 increases and the sizes of thesecond dot regions may decrease as the distance between the second dotregions and the first electrode pad 37 increases.

Further, the dot regions 39 b in the second electrode extensions 39 amay be divided into third dot regions closer to the second electrode pad39 than the first electrode pad 37 and fourth dot regions closer to thefirst electrode pad than the second electrode pad. The sizes of thethird dot regions may increase as the distance between the third dotregions and the second electrode pad 39 increases and the sizes of thefourth dot regions may decrease as the distance between the fourth dotregions and the second electrode pad 39 increases.

Generally, since electric current tends to crowd around the firstelectrode pad 37 or the second electrode pad 39, the LED chip isconfigured to have relatively small dot regions formed in regions nearthese electrode pads 37, 39 and relatively large dot region formed inregions distant from these electrode pads, thereby enhancing currentspreading.

In addition, the sizes of the dot regions may increase as the distancebetween the dot regions and a line crossing the first electrode pad 37and the second electrode pad 39 increases, thereby preventing currentcrowding at a central region of the LED chip.

FIG. 11 is a schematic plan view of an LED chip according to yet anotherexemplary embodiment of the invention, and FIGS. 12a, 12b, 12c and 12dare sectional views taken along lines A-A, B-B, C-C and D-D of FIG. 11,respectively.

Referring to FIGS. 11 and FIGS. 12a, 12b, 12c and 12d , the LED chip mayinclude a semiconductor stack 30, a plurality of mesa structures M1, M2,a separation region SR, a first electrode pad 37, a second electrode pad39, first electrode extensions 37 a, 37 b, 37 c, second electrodeextensions 39 a, and a protective insulation layer 35. The LED chip mayfurther include a substrate 21, a buffer layer 23, a first functionallayer 31 a, a second functional layer 31 b, a transparent conductivelayer 33, a lower reflector 45, and a metal layer 47. Meanwhile, thesemiconductor stack 30 includes a first conductive type semiconductorlayer 25, an active layer 27, and a second conductive type semiconductorlayer 29.

The substrate 21, first conductive type semiconductor layer 25, activelayer 25 and second conductive type semiconductor layer 29 of the LEDchip according to this embodiment are similar to those of the LED chipdescribed with reference to FIGS. 1, 2 a, 2 b and 2 c, and detaileddescriptions thereof will thus be omitted herein.

The semiconductor stack 30 includes the plurality of mesa structures M1,M2 separated from each other by the separation region SR. Each of themesa structures M1, M2 includes the second conductive type semiconductorlayer 29 and the active layer 27 interposed between the first conductivetype semiconductor layer 25 and the second conductive type semiconductorlayer 29. Namely, the second conductive type semiconductor layer 29 andthe active layer 27 are separated by the separation region SR, therebyforming the plurality of mesa structures M1, M2. An upper surface of thefirst conductive type semiconductor layer 25 is exposed by theseparation region SR.

The plurality of mesa structures M1, M2 may have the same shapes. Forexample, as shown in FIG. 11, two mesa structures M1, M2 may havesymmetrical structures with respect to the separation region SR. In thisembodiment, the LED chip is illustrated as including the two mesastructures M1, M2, but the invention is not limited thereto. It shouldbe understood that the LED chip according to the invention may have twoor more mesa structures.

Each of the mesa structures M1, M2 has a plurality of through-holes 30 aextending through second conductive type semiconductor layer 29 and theactive layer 27 to expose the first conductive type semiconductor layer25. The plurality of through-holes 30 a is linearly arranged along firstelectrode extensions 37 a, as shown in FIG. 11.

The transparent conductive layer 33 may be formed on the secondconductive type semiconductor layer 29. The transparent conductive layer33 may be formed of indium tin oxide (ITO) or Ni/Au and forms an ohmiccontact with the second conductive type semiconductor layer 29.

As clearly shown in FIG. 12a , the first electrode pad 37 is located onthe second conductive type semiconductor layer 29 of the semiconductorstack 30. The first electrode pad 37 may include a plurality ofelectrode pads 37 located on the mesa structures M1, M2, respectively.These electrode pads may be connected to each other by, for example, theelectrode extension 37 c. The first electrode extensions 37 a extendfrom the first electrode pad 37. The first electrode pad 37 is insulatedfrom the semiconductor stack 30 and electrically connected to the firstconductive type semiconductor layer 25 through the first electrodeextensions 37 a. The first electrode extensions 37 a are connected tothe first conductive type semiconductor layer 25 exposed through theplurality of through-holes 30 a.

Meanwhile, the first electrode extension 37 b may be connected to thefirst conductive type semiconductor layer 25 exposed on the separationregion SR. The first electrode extension 37 b is electrically connectedto the first electrode pad 37.

As clearly shown in FIG. 12d , the first conductive type semiconductorlayer 25 is exposed through the separation region SR and the firstelectrode extension 37 b is connected to the first conductive typesemiconductor layer 25 in the separation region SR. Meanwhile, a dotpattern 31 c formed of an insulation material is located between thefirst conductive type semiconductor layer 25 and the first electrodeextension 37 b such that the first electrode extension 37 b can bepartially separated from the first conductive type semiconductor layer25. The dot pattern 31 c allows the first electrode extension 37 b to beconnected to the first conductive type semiconductor layer 25 in aplurality of dot region separated from each other instead of beingcontinuously connected thereto, thereby relieving current crowdingaround the first electrode extension 37 b.

The second electrode pad 39 may be located on the transparent conductivelayer 33. The second electrode pad 39 may include a plurality ofelectrode pads 39 located on the mesa structures M1, M2, respectively.Further, the second electrode extensions 39 a may extend from the secondelectrode pad 39. The second electrode pad 39 and the second electrodeextensions 39 a may be connected to the transparent conductive layer 33.

Meanwhile, a protective insulation layer 35 is located on thesemiconductor stack 30 to cover the semiconductor stack 30. Theprotective insulation layer 35 may cover the transparent conductivelayer 33. In addition, the protective insulation layer 35 is interposedbetween the first electrode pad 37 and the second conductive typesemiconductor layer 29 to separate the first electrode pad 37 from thesecond conductive type semiconductor layer 29, and between the firstelectrode extensions 37 a and the second conductive type semiconductorlayer 29 to separate the first electrode extensions 37 a from the secondconductive type semiconductor layer 29. Further, the protectiveinsulation layer 35 covers side walls of the plurality of through-holes30 a to insulate the first electrode extensions 37 a from the sidewalls.The protective insulation layer 35 may also separate the first electrodeextension 37 b from the second conductive type semiconductor layer 29.

The first functional layer 31 a may be interposed in a pattern of dotsbetween the protective insulation layer 35 and the second conductivetype semiconductor layer 29 under the first electrode pad 37 and thefirst electrode extensions 37 a. Further, the second functional layer 31b may be located between the transparent conductive layer 33 and thesecond conductive type semiconductor layer 29. The first functionallayer 31 a and the second functional layer 31 b are similar to the firstfunctional layer 31 a and the second functional layer 31 b describedwith reference to FIGS. 1, 2 a, 2 b and 2 c, and detailed descriptionsthereof will thus be omitted herein. The second functional layer 31 bmay be formed of the same material as that of the first functional layer31 a and the dot pattern 31 c may also be formed of the same material asthat of the functional layers 31 a, 31 b.

In this embodiment, the lower reflector 45 is located under thesubstrate 21 and the metal layer 47 may be located under the lowerreflector 45. The lower reflector and the metal layer 47 are similar tothe lower reflector 45 and the metal layer 47 described with referenceto FIG. 1, FIGS. 2a, 2b and 2c , and detailed descriptions thereof willbe omitted herein.

According to this embodiment, the plurality of mesa structures M1, M2are separated from each other and located on the first conductive typesemiconductor layer 25. Therefore, when the LED chip is operated at highelectric current, the electric current spreads to and flows through therespective mesa structures M1, M2. Thus, it is possible to prevent areduction in external quantum efficiency due to current crowding at acertain position of the semiconductor stack 30. In particular, if acertain mesa structure has a defect, the LED chip may prevent flow ofhigh electric current through the defect, thereby preventing a reductionin external quantum efficiency of a large LED chip.

Next, a method of fabricating the LED chip will be described.

First, epitaxial layers 25, 27, 29 are grown on a substrate 21. A bufferlayer 23 may further be formed before forming the epitaxial layers.Then, a second conductive type semiconductor layer 29 and an activelayer 27 are patterned to form a semiconductor stack 30 having aplurality of mesa structures M1, M2. At this time, a plurality ofthrough-holes 30 a is also formed therein and a separation region SR isformed to divide the mesa structures M1, M2 from each other.

Then, a first functional layer 31 a and a second functional layer 31 bare formed on the second conductive type semiconductor layer 29.Further, a dot pattern 31 c may be formed together therewith. The firstfunctional layer 31 a may be formed in a dot pattern on a region to beformed with a first electrode pad 37 and on regions of the secondconductive type semiconductor layer between the plurality ofthrough-holes 30 a. The second functional layer 31 b is formed alongregions where a second electrode pad 39 and second electrode extensions39 a will be formed. The dot pattern 31 c is formed on regions of thefirst conductive type semiconductor layer 25 exposed by the separationregion SR. Both the first functional layer 31 a and the secondfunctional layer 31 b may be formed of an insulation material or areflective material. Further, the first and second functional layers 31a, 31 b may be formed as distributed Bragg reflectors. The first andsecond functional layers 31 a, 31 b may be formed before the formationof the semiconductor stack 30 of the mesa structures.

Then, a transparent conductive layer 33 is formed on the secondconductive type semiconductor layer 29. The transparent conductive layer33 is connected to the second conductive type semiconductor layer 29 andcovers the second functional layer 31 b. At this time, the firstfunctional layer 31 a is exposed, instead of being covered with thetransparent conductive layer 33.

Then, a protective insulation layer 35 is formed to cover thetransparent conductive layer 33, the first functional layer 31 a and theplurality of through-holes 30 a. Meanwhile, the protective insulationlayer 35 in the plurality of through-holes 30 a is etched to expose thefirst conductive type semiconductor layer 25. In addition, theprotective insulation layer 35 above the second functional layer 31 b isetched to expose the transparent conductive layer 33. Further, theprotective insulation layer 35 may cover sidewalls of the mesastructures M1, M2 located at opposite sides of the separation region SR.

Next, the first electrode pad 37, the second electrode pad 39, firstelectrode extensions 37 a, 37 b, 37 c, and second electrode extensions39 a are formed. Meanwhile, the first electrode extensions 37 a coversthe plurality of through-holes 30 a linearly arranged and are connectedto the first conductive type semiconductor layer 25. Meanwhile, thefirst electrode extension 37 b is formed in the separation region SR andcovers the dot pattern 31 c. The first electrode extensions 37 a, 37 bmay be connected to the first electrode pad 37 through the firstelectrode extensions 37 c, and the plurality of electrode pads arerespectively located on the mesa structures M1, M2 to be connected toeach other through the first electrode extensions 37 c. The firstelectrode extensions 37 c may be arranged along edges of the mesastructures M1, M2. In this case, the first electrode extensions 37 c mayalso be partially connected to the first conductive type semiconductorlayer 25. The first electrode extensions 37 c may be connected to thefirst conductive type semiconductor layer at portions on the edges ofthe mesa structures M1, M2 having the second conductive typesemiconductor layer 29 and the active layer 27 removed therefrom,instead of being connected thereto in the through-holes 30 a. In otherwords, portions of the through-holes 30 a having the first electrodeextensions 37 c connected to the first conductive type semiconductorlayer 25 may be exposed to the outside of the mesa structures M1, M2.

Further, the second electrode pad 39 and the second electrode extensions39 a are formed on the transparent conductive layer 33 above the secondfunctional layer 31 b.

Then, a lower reflector 45 and a metal layer 47 are formed under thesubstrate 21, and then the substrate 21 is divided into individual LEDchips, thereby finishing preparation of the LED chips.

In this embodiment, the dot pattern 31 c is formed by the same processas that used to form the first functional layer 31 a and the secondfunctional layer 31 b. However, the dot pattern 31 c may be omitted fromthe LED chip. In this case, after a protective insulation layer 35 isformed to cover the separation region SR, the protective insulationlayer 35 in the separation region SR is partially etched to form aplurality of openings through which the first conductive typesemiconductor layer 25 is exposed, thereby forming an insulation patternthat partially separates the first electrode extension 37 b from thefirst conductive type semiconductor layer 25.

FIG. 13 is a schematic plan view of an LED chip according to yet anotherexemplary embodiment of the invention, and FIGS. 14a, 14b, 14c and 14dare sectional views taken along lines A-A, B-B, C-C and D-D of FIG. 13,respectively.

Referring to FIGS. 13, 14 a, 14 b, 14 c and 14 d, the LED chip accordingto this embodiment is generally similar to the LED chip of the aboveexemplary embodiment described with reference to FIGS. 11, 12 a, 12 b,12 c and 12 d, and detailed descriptions of identical components willthus be omitted herein.

First, as shown in FIG. 14a , a first electrode pad 37 is directlylocated on a first functional layer 51 a. Namely, the protectiveinsulation layer 35 is removed from between the first electrode pad 37and the first functional layer 51 a. Further, the protective insulationlayer 35 is also removed from between the first electrode extensions 37a and the semiconductor stack 30. Here, the first functional layer 51 ais formed of an insulation material and may constitute a distributedBragg reflector. A second functional layer 31 b may also be formed ofthe same material as that of the first functional layer 51 a by the sameprocess.

Meanwhile, the first electrode extensions 37 a in a plurality ofthrough-holes 30 a are separated from sidewalls in the through-holes 30a by the first functional layer 51 a. Specifically, the first functionallayer 51 a located on the second conductive type semiconductor layer 29in regions between the plurality of through-holes 30 a extends into theplurality of through-holes 30 a and covers the sidewalls of thethrough-holes 30 a. Meanwhile, some of the sidewalls, that is, sidewallslocated at opposite sides of the first electrode extensions 37 a in theplurality of through-holes 30 a, may be covered with the protectiveinsulation layer 35.

In the previous exemplary embodiment, openings formed on the protectiveinsulation layer 35 include regions exposing the transparent conductivelayer 33 and regions exposing the first conductive type semiconductorlayer 25 in the plurality of through-holes 30 a and the separationregion SR. Among these regions, the regions exposing the transparentconductive layer 33 correspond to regions at which the second electrodepad 39 and the second electrode extensions 39 a are formed, but theregions exposing the first conductive type semiconductor layer do notcorrespond to the first electrode pad 37 and the first electrodeextensions 37 a, 37 b. Accordingly, when the first and second electrodepads 37, 39 and the first and second electrode extensions 37 a, 37 b, 37c, 39 a are simultaneously formed by lift-off, the pattern of openingsis first formed on the protective insulation layer 35 using a photomask,and the first and second electrode pads 37, 39 and the first and secondelectrode extensions 37 a, 37 b, 37 c, 39 a are formed using anotherphotomask.

According to the present embodiment, however, since the shapes of thefirst and second electrode pads 37, 39 and the shapes of the first andsecond electrode extensions 37 a, 37 b, 37 c, 39 a correspond to thepattern of openings formed on the protective insulation layer 35, thefirst and second electrode pads 37, 39 and the first and secondelectrode extensions 37 a, 37 b, 37 c, 39 a may be formed using the samephotomask as that for patterning the protective insulation layer 35. Inaddition, after forming the pattern of openings on the protectiveinsulation layer 35 using a photoresist, the photoresist may becontinuously used to form the first and second electrode pads 37, 39 andthe first and second electrode extensions 37 a, 37 b, 37 c, 39 a.Accordingly, it is possible to reduce the number of photomasks forfabrication of LED chips, so that the number of photolithography anddeveloping processes for forming the photoresist pattern can be reduced.

FIGS. 15a, 15b and 15c are sectional views of an LED chip according toyet another exemplary embodiment of the invention. The respectivefigures correspond to sectional views taken along lines A-A, B-B and C-Cof FIG. 11. Further, in this embodiment, the sectional view taken alongline D-D of FIG. 11 is the same as the corresponding sectional view ofthe present embodiment and is thus omitted herein.

Referring to FIGS. 15a, 15b and 15c , the LED chip according to thisembodiment is generally similar to the LED chip described with referenceto FIGS. 11 and 12. In this embodiment, however, a transparentconductive layer 33 extends to a region between a first electrode pad 37and a second conductive type semiconductor layer 29 and to regionsbetween first electrode extensions 37 a and the second conductive typesemiconductor layer 29. The transparent conductive layer 33 may alsoextend to regions between a first electrode extension 37 c and thesecond conductive type semiconductor layer 29.

Specifically, in the exemplary embodiment of FIG. 11, the transparentconductive layer 33 is not formed on regions of the second conductivetype semiconductor layer 29 under the first electrode pad 37 and thefirst electrode extensions 37 a, 37 c, whereas the transparentconductive layer 33 is also formed on these regions in this embodiment.Since the transparent conductive layer 33 is connected to the regions ofthe second conductive type semiconductor layer 29 under the firstelectrode pad 37 and the first electrode extensions 37 a, 37 c, electriccurrent can be supplied to the semiconductor stack 30 in these regions.

The first electrode pad 37 and the first electrode extensions 37 a, 37 care insulated from the transparent conductive layer 33 by the protectiveinsulation layer 35, and a first functional layer 61 a may be locatedbetween the protective insulation layer 35 and the transparentconductive layer 33.

In this embodiment, the first functional layer 61 a and a secondfunctional layer 31 b are formed by separate processes. Specifically,after the transparent conductive layer 33 is formed to cover the secondfunctional layer 31 b, the first functional layer 61 a is formed againon the transparent conductive layer 33.

FIGS. 16a, 16b and 16c are sectional views of an LED chip according toyet another exemplary embodiment of the invention. The respectivefigures correspond to sectional views taken along lines A-A, B-B and C-Cof FIG. 13. Further, in this embodiment, the sectional view taken alongline D-D of FIG. 13 is the same as the corresponding sectional view ofthe present embodiment and is thus omitted herein.

Referring to FIGS. 16a, 16b and 16c , the LED chip of this embodiment isgenerally similar to the LED chip described with reference to FIGS. 13and 14. In this embodiment, however, a transparent conductive layer 33extends to a region between a first electrode pad 37 and a secondconductive type semiconductor layer 29 and to regions between firstelectrode extensions 37 a and the second conductive type semiconductorlayer 29. The transparent conductive layer 33 may also extend to regionsbetween a first electrode extension 37 c and the second conductive typesemiconductor layer 29.

Specifically, in the exemplary embodiment of FIG. 13, the transparentconductive layer 33 is not formed on regions of the second conductivetype semiconductor layer 29 under the first electrode pad 37 and thefirst electrode extensions 37 a, 37 c, whereas the transparentconductive layer 33 is located on these regions in the presentembodiment. Since the transparent conductive layer 33 is connected tothe regions of the second conductive type semiconductor layer 29 underthe first electrode pad 37 and the first electrode extensions 37 a, 37c, electric current can be supplied to the semiconductor stack 30 inthese regions.

The first electrode pad 37 and the first electrode extensions 37 a, 37 care insulated from the transparent conductive layer 33 by a firstfunctional layer 71 a.

In this embodiment, the first functional layer 71 a and a secondfunctional layer 31 b are formed by separate processes. Specifically,after the transparent conductive layer 33 is formed to cover the secondfunctional layer 31 b, the first functional layer 71 a is formed againon the transparent conductive layer 33.

FIG. 17 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention

Referring to FIG. 17, the LED chip according to this embodiment isgenerally similar to the LED chip described with reference to FIGS. 11and 12. In this embodiment, however, a second functional layer 71 b isarranged in a pattern of dots along a second electrode pad 39 and secondelectrode extensions 39 a.

Specifically, the second functional layer 71 b is arranged in thepattern of dots instead of being linearly arranged. In this embodiment,the transparent conductive layer 33 covers the second functional layer71 b and is connected to the second conductive type semiconductor layer29 in regions between the dots.

Arrangement of the second functional layer 71 b in the dot pattern maybe applied not only to the exemplary embodiment shown in FIGS. 11 and12, but also to the exemplary embodiments shown in FIGS. 13 to 16.

FIG. 18 is a sectional view of an LED chip according to yet anotherexemplary embodiment of the invention.

Referring to FIG. 18, the LED chip according to this embodiment isgenerally similar to the LED chip described with reference to FIGS. 11and 12. In this embodiment, however, a second functional layer 81 b isarranged in a pattern of dots along a second electrode pad 39 and secondelectrode extensions 39 a on a transparent conductive layer 33.

Specifically, the second functional layer 81 b is arranged in thepattern of dots between a transparent conductive layer 33 and a secondelectrode pad 30 and between the transparent conductive layer 33 and thesecond electrode extensions 39 a. The second electrode extensions 39 aare connected to the transparent conductive layer 33 in regions betweenthe dots.

The second functional layer 81 b according to this embodiment may beapplied not only to the exemplary embodiment shown in FIGS. 11 and 12,but also to the exemplary embodiments shown in FIGS. 13 to 16.Furthermore, when the second functional layer 81 b is applied to theexemplary embodiments of FIGS. 15 and 16, the first functional layers 61a, 71 a and the second functional layer 81 b may be formed on thetransparent conductive layer 33 by the same process.

FIGS. 19(a) and 19(b) are schematic plan views of an LED chip accordingto yet another exemplary embodiment of the invention.

Referring to FIG. 19(a), differing from the above exemplary embodiments,the LED chip according to this embodiment includes first electrode pads37, which are electrically separated from each other. Specifically, inthe above exemplary embodiments, the first electrode pads 37respectively located on the mesa structures M1, M2 are electricallyconnected to each other by the first electrode extensions 37 c, whereasthe first electrode pads 37 are electrically separated from each otherin this embodiment.

Referring to FIG. 19(b), in the LED chip according to this embodiment, apart of the first electrode pad 37 is located in the separation regionSR. The remaining portion of the first electrode pad 37 is located onthe mesa structures M1 and M2. In this embodiment, two mesa structuresM1 and M2 may share the first electrode pad 37, thereby reducing thenumber of first electrode pad 37. Further, the first electrode extension37 b in the separation region SR may be directly connected to the firstelectrode pad 37.

Various exemplary embodiments and modifications including two or moremesa structures M1, M2 may also be realized. Each of the mesa structuresincludes a first electrode pad and a second electrode pad thereon. Inthis case, the first electrode pads may be electrically separated fromeach other and the second electrode pads may also be separated from eachother.

FIG. 20 is plan views illustrating light emitting patterns forexplaining enhancement of light emitting characteristics when adopting aplurality of mesa structures. Here, FIG. 20(a) shows a light emittingpattern of an LED chip having first electrode extensions and secondelectrode extensions on a single mesa structure, and FIG. 20(b) is alight emitting pattern of an LED chip having mesa structures M1, M2which are completely separated into two regions by a separation regionSR. Further, the color of a certain region approaching a red colorindicates that the region emits large amounts of light, the color of acertain region approaching a blue color indicates that the region emitssmall amounts of light, and a black color indicates that thecorresponding region does not emit light.

The LED chip of FIG. 20(a) has a single mesa structure which is notseparated into two or more regions, and the LED chip of FIG. 20(b)includes mesa structures which are separated from each other by theseparation region SR. Although both LED chips have a similar arrangementof electrode pads 37, 39 and electrode extensions 37 a, 37 b therein, itcan be ascertained that the LED chip of FIG. 20(b) having two mesastructures M1, M2 completely separated from each other exhibits a moreuniform light emitting pattern and emits more light than the LED chip ofFIG. 20(a).

FIG. 21 is a plan view showing a light emitting diode according to yetanother exemplary embodiment of the disclosed technology, FIG. 22 is across-sectional view taken along line I-I′ of FIG. 21, and FIG. 23 is across-sectional view taken along line II-II′ of FIG. 21.

The light emitting diode according to yet another exemplary embodimentof the disclosed technology includes a substrate 21, a firstconductive-type semiconductor layer 25, an active layer 27, a secondconductive-type semiconductor layer 29, a current blocking layer 31 b, atransparent conductive layer 33, a protective insulation layer 35, afirst electrode pad 37, first electrode extensions 37 a, a secondelectrode pad 39, and second electrode extensions 39 a.

The substrate 21 may be or include a sapphire substrate, but is notlimited thereto. The substrate 21 substantially has a quadrangular shapeand has edges opposite to each other. In addition, the substrate 21 maybe or include a sapphire substrate PSS having a pattern formed thereon,as shown.

The first conductive-type semiconductor layer 25 is located on thesubstrate 21, the second conductive-type semiconductor layer 29 islocated on the first conductive-type semiconductor layer 25, and theactive layer 27 is interposed between the first conductive-typesemiconductor layer 25 and the second conductive-type semiconductorlayer 29. The first conductive-type semiconductor layer 25, the activelayer 27, and the second conductive-type semiconductor layer 29 may beformed of or include a gallium nitride (GaN) based compoundsemiconductor material such as (Al, In, Ga)N, or the like. In addition,elements and composition ratios of the active layer 27 are determined toemit light having a desired wavelength, for example, UV or blue light.

The first conductive-type semiconductor layer 25 may include an n-typenitride semiconductor layer, and the second conductive-typesemiconductor layer 29 may include a p-type nitride semiconductor layer,or vice versa.

The first conductive-type semiconductor layer 25 and the secondconductive-type semiconductor layer 29 may have a single layerstructure, as shown, or a multilayer structure. In addition, the activelayer 27 may have a single quantum well structure or a multi-quantumwell structure. In addition, a buffer layer (not shown) such as GaN orAlN may be interposed between the substrate 21 and the firstconductive-type semiconductor layer 25. The semiconductor layers may beformed by a metal organic chemical vapor deposition (MOCVD) or molecularbeam epitaxy (MBE) technology.

A light emitting structure 30 has a plurality of grooves g penetratingthrough the second conductive-type semiconductor layer 29 and the activelayer 27 to expose the first conductive-type semiconductor layer 25. Thegrooves provide openings positioned over the first conductive-typesemiconductor layer 25 and may have various shapes. The plurality ofgrooves g are linearly disposed along the first electrode extensions 37a.

The transparent conductive layer 33 may be located on the secondconductive-type semiconductor layer 29. The transparent conductive layer33 may be formed of or include a transparent oxide such as an indium tinoxide (ITO) or a metal oxide such as ZnO, Al2O3, or the like, and formsan ohmic contact with the second conductive-type semiconductor layer 29.The transparent conductive layer 33 electrically contacts the secondconductive-type semiconductor layer 29, and serves to spread a currentover a wide area of the light emitting diode.

As shown in FIG. 22, holes h may be formed in portions of thetransparent conductive layer 33 located under the second electrodeextensions 39 a. The holes h cause the transparent conductive layer 33to have openings and may have various shapes. With the holes h, thesecond electrode extensions 39 a and the transparent conductive layer 33are electrically insulated from each other in positions in which theholes h are formed. In addition, as shown in FIG. 23, the secondelectrode pad 39 may be located on the transparent conductive layer 33,and the second electrode extensions 39 a may extend from the secondelectrode pad 39. The second electrode pad 39 and the second electrodeextensions 39 a may be connected to the transparent conductive layer 33.

Here, in the light emitting diode according to yet another exemplaryembodiment of the disclosed technology, as shown in FIG. 21, two firstelectrode extensions 37 a extend from the first electrode pad 37, andthree electrode extensions 39 a extend from the second electrode pad 39.

The holes h penetrating through the transparent conductive layer 33 areformed in a state in which they are spaced apart from each other by apredetermined interval along the second electrode extensions 39 a.Therefore, the second electrode extensions 39 a and the transparentconductive layer 33 are not electrically connected to each other in thepositions in which the holes h are formed. Thus, an electrical flow isblocked in the corresponding positions in which the holes h are formed,and

The first electrode pad 37 and the first electrode extensions 37 a arelocated on the second conductive-type semiconductor layer 29 of thelight emitting structure 30, as shown in FIG. 22, and the firstelectrode extensions 37 a extend from the first electrode pad 37, asshown in FIG. 21. In addition, as shown in FIG. 23, the first electrodepad 37 is insulated from the light emitting structure 30, and iselectrically connected to the first conductive-type semiconductor layer25 through the first electrode extensions 37 a. The first electrodeextensions 37 a are connected to the first conductive-type semiconductorlayer 25 exposed through the plurality of grooves g.

The protective insulation layer 35 is located on the light emittingstructure 30 to cover the light emitting structure 30 and thetransparent conductive layer 33. In addition, the protective insulationlayer 35 covers sidewalls of the transparent conductive layer 33 toinsulate the first electrode extensions 37 a from the transparentconductive layer 33, as shown in FIG. 22, and covers sidewalls of thegrooves g to insulate the second electrode extensions 39 a from thesecond conductive-type semiconductor layer 29, as shown in FIG. 23.

The current blocking layer 31 b may be interposed between thetransparent conductive layer 33 and the second conductive-typesemiconductor layer 29. As shown in FIG. 23, the current blocking layer31 b is restrictively located under the second electrode pad 39 and thesecond electrode extensions 39 a, and the transparent conductive layer33 is connected to the second conductive-type semiconductor layer 29while covering the current blocking layer 31 b. In addition, as shown inFIG. 22, when the holes h penetrating through the transparent conductivelayer 33 are formed, the second electrode extensions 39 a and thecurrent blocking layer 31 b may be connected to each other, and thetransparent conductive layer 33 may be connected to the secondconductive-type semiconductor layer 29 while covering only a portion ofthe current blocking layer 31 b.

The current blocking layer 31 b may be formed of or include aninsulation material to block a current from flowing from the secondelectrode extensions 39 a to the second conductive-type semiconductorlayer 29. Therefore, the current blocking layer 31 b relieves currentcrowding around the second electrode extensions 39 a, thereby enhancingcurrent spreading performance. Further, as shown in FIG. 22, since thetransparent conductive layer 33 and the second electrode extensions 39 aare insulated from each other in the positions in which the holes h areformed, the current is blocked in the positions in which the holes h areformed. Therefore, as illustrated in FIG. 21, the current may crowdbetween the holes h. That is, since the current is blocked in thepositions in which the holes h are formed, current density in positionsin which the holes h are not formed is locally maximized, such thatlight efficiency of the light emitting diode may be improved.

Here, as shown in FIG. 21, the holes h are formed in only the secondelectrode extensions 39 a such that the holes h are spaced apart fromeach other by a predetermined interval. It is preferable that the holesh are formed in positions mismatched with positions in which the groovesg of the first electrode extensions 37 a are formed. In someimplementations, the holes h and the grooves g are formed on differenthorizontal lines from each other. In detail, since the current may beblocked in the positions in which the grooves g of the first electrodeextensions 37 a are formed as well as the positions in which the holes hare formed, the holes h are located to be mismatched with the grooves soas not to be formed in parallel with the position in which the grooves gof the first electrode extensions 37 a are formed. Therefore, currentdensity may be locally maximized between the grooves g of the firstelectrode extensions 37 a and the holes h of the second electrodeextensions 39 a.

In addition, the holes h may be formed to have a length L so that theholes h are not overlapped with positions of the grooves g formed in thefirst electrode extensions 37 a in order to maximize the currentcrowding between the holes h. In some implementations, the holes h maybe formed to have a width W greater than that of the second electrodeextensions 39 a and smaller than that of a current blocking part,thereby making it possible to allow the transparent conductive layer 33to be insulated from the second electrode extensions 39 a while coveringa portion of the current blocking part.

In addition, as shown in FIG. 22, the holes h may be formed to have adepth that penetrates through the transparent conductive layer 33 andthe protective insulation layer 35 so that the current blocking layer 31b may be exposed. That is, the holes h are not formed up to a depth ofthe light emitting structure 30 unlike the grooves g, and may be formedat a depth enough to expose the current blocking layer 31 b of the firstelectrode extensions 37 a.

FIG. 24 is a plan view showing a light emitting diode according to yetanother exemplary embodiment of the disclosed technology, FIG. 25 is across-sectional view taken along line III-III′ of FIG. 24, and FIG. 26is a cross-sectional view taken along line IV-IV′ of FIG. 24.

The light emitting diode according to yet another exemplary embodimentof the disclosed technology includes a substrate 21, a firstconductive-type semiconductor layer 25, an active layer 27, a secondconductive-type semiconductor layer 29, a current blocking layer 31 b, atransparent conductive layer 33, a first electrode pad 37, a secondelectrode pad 39, first electrode extensions 37 a, and second electrodeextensions 39 a. In addition, the same description as that of yetanother exemplary embodiment of FIG. 21 will be omitted in thedescriptions of the light emitting diode according to yet anotherexemplary embodiment of the disclosed technology.

The first and second electrode pads 37 and 39 of the light emittingdiode according to yet another exemplary embodiment of the disclosedtechnology are located above the light emitting structure 30, a firstelectrode extension 37 a extends from the first electrode pad 37 alongan edge of the light emitting diode, and a second electrode extension 39a extends from the second electrode pad 39 toward the first electrodepad 37. Here, the first electrode extension 37 a and the secondelectrode extension 39 a may extend in parallel with each other so as tobe opposite to each other.

In addition, grooves g are formed in the first electrode extension 37 aso that the first electrode extension 37 a may directly contact thefirst conductive-type semiconductor layer 25, as shown in FIG. 26, andholes h are formed in the second electrode extension 39 a so that thefirst electrode extension 37 a may direct contact the current blockinglayer 31 b, as shown in FIG. 25.

Here, the grooves g and the holes h are formed in positions mismatchedwith each other, respectively, as shown in FIG. 24. The holes h areformed not to be overlapped with positions of the grooves g.

Although the protective insulation layer is not shown in FIGS. 25 and 26in yet another exemplary embodiment of the disclosed technology, theprotective insulation layer may be formed to cover the light emittingstructure 30 and the transparent conductive layer 33. For example, whenthe first electrode extension 37 a is formed in the hole h penetratingthrough the transparent conductive layer 33 in FIG. 25, the insulationlayer may cover the transparent conducive layer 33 so that thetransparent conductive layer 33 and the first electrode extension 37 amay be electrically insulated from each other.

According to the some implementations of the disclosed technology, oneor more holes are formed in the second electrode extension extendingfrom the second electrode pad to allow the current to be blocked in thepositions in which the holes are formed, such that the current crowdingat the positions in which the holes are not formed may be maximized,thereby making it possible to improve the light efficiency of the lightemitting diode.

Although the invention has been illustrated with reference to someexemplary embodiments in conjunction with the drawings, it will beapparent to those skilled in the art that various modifications andchanges can be made to the invention without departing from the spiritand scope of the invention. Therefore, it should be understood that theexemplary embodiments are provided by way of illustration only and aregiven to provide complete disclosure of the invention and to providethorough understanding of the invention to those skilled in the art.Thus, it is intended that the invention covers the modifications andvariations provided they fall within the scope of the appended claimsand their equivalents.

1. A light emitting diode device comprising: a light emitting structureincluding a first conductive-type semiconductor layer, a secondconductive-type semiconductor layer located over the firstconductive-type semiconductor layer, and an active layer interposedbetween the first conductive-type semiconductor layer and the secondconductive-type semiconductor layer; a transparent conductive layerformed over the second conductive-type semiconductor layer; a secondelectrode pad formed over the transparent conductive layer; a secondelectrode extension extending from the second electrode pad; and acurrent blocking layer interposed between the transparent conductivelayer and the second conductive-type semiconductor layer, wherein thetransparent conductive layer has an opening exposing at least a portionof the current blocking layer, and the second electrode extensionincludes a first portion electrically connected to the transparentconductive layer and a second portion electrically insulated from thetransparent conductive layer.
 2. The light emitting diode device ofclaim 1, wherein the transparent conductive layer has one or moreadditional openings that are formed along the second electrode extensionand spaced apart from one another.
 3. The light emitting diode device ofclaim 1, wherein the first portion of the second electrode extension islocated on the transparent current blocking layer, and the secondportion of the second electrode extension is located on the currentblocking layer exposed through the opening of the transparent conductivelayer.
 4. The light emitting diode device of claim 1, wherein the holehas a width smaller than that of the current blocking layer.
 5. Thelight emitting diode of claim 1, further comprising a protectiveinsulation layer covering the transparent conductive layer.
 6. The lightemitting diode of claim 1, further comprising: a first electrode padformed on the second conductive-type semiconductor layer so as to beopposite to the first conductive-type semiconductor layer; and a firstelectrode extension extending from the first electrode pad.
 7. The lightemitting diode of claim 1, wherein the light emitting structure has agroove penetrating through the second conductive-type semiconductorlayer and the active layer to expose the first conductive-typesemiconductor layer, and the first electrode extension is connected tothe first conductive-type semiconductor layer through the groove.
 8. Thelight emitting diode of claim 7, wherein the light emitting structurehas one or more additional grooves that are arranged along the firstelectrode extension.
 9. The light emitting diode of claim 6, wherein thefirst electrode extension and the second electrode extension aredisposed in parallel with each other, and the opening and the groove aredisposed on different horizontal lines from each other.
 10. The lightemitting diode device of claim 7, wherein the opening is formed to havea length not overlapped with the groove.
 11. The light emitting diodedevice of claim 6, wherein the first electrode extension is formed alongan edge of the light emitting diode device.
 12. The light emitting diodedevice of claim 1, wherein the transparent conductive layer includes ametal oxide.
 13. A light emitting diode device comprising: a substratehaving first and second edge that oppose to each other; a light emittingstructure including a first conductive-type semiconductor layer formedover the substrate, a second conductive-type semiconductor layer formedover the first conductive-type semiconductor layer; and an active layerinterposed between the first conductive-type semiconductor layer and thesecond conductive-type semiconductor layer; a first electrode pad formedover the light emitting structure around the first edge of thesubstrate; a first electrode extension extending from the firstelectrode pad; a second electrode pad formed over the light emittingstructure around the second edge of the substrate; and a secondelectrode extension extending from the second electrode pad, whereinalong the first electrode extension, first openings are located spacedapart from one another to connect the first electrode extension to thefirst conductive-type semiconductor layer, and along the secondelectrode extension, second openings are located spaced apart from oneanother to cause a current block in the openings and a current crowdbetween the openings.
 14. The light emitting diode device of claim 13,wherein the substrate includes a sapphire substrate.
 15. The lightemitting diode device of claim 13, wherein the first openings penetratethrough the active layer and the second conductive-type semiconductorlayer.
 16. The light emitting diode device of claim 13, furthercomprising a transparent conductive layer located over the secondconductivity-type semiconductor layer and having a first portionelectrically connected to the second electrode extension and a secondportion electrically insulated from the second electrode extension. 17.The light emitting diode device of claim 13, further comprising acurrent blocking layer located between the second conductivity-typesemiconductor layer and the second electrode extension.
 18. The lightemitting diode device of claim 13, further comprising a protectiveinsulation layer covering the transparent conductive layer.
 19. Thelight emitting diode device of claim 13, wherein the first openings andthe second openings are positioned on different horizontal lines fromeach other.
 20. The light emitting diode device of claim 13, wherein thesecond openings have a width greater than that of the second electrodeextension.